High Power Dissipaton 2N3773



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2N3773 data
2N3773 datasheet
COMPLEMENTARY SILICON PO/NER TRANSISTORS
FEATURES:
* High Power Dissipaton
PD = 150 W (Tc = 25oC)
High DC Current Gain and Low Saturation Voltage
hFE=15-60@IC=8A,VCE=4V
VCE($A.r) = 1.4 V (Max.) @ lc = 8 A, lB = 0.8 A
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
* Pulse Test: F:,uise width = 300 us . Duty Cycle = 2.0%
ACTIVE-REGION SAFE OPERATING AREA (SOA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are tvto limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits ofthe transistor that must be observed for reliable operation i.e., the transistor must not besubjectedto
greater dissipation than curves indicate.The data of SOA curve is base on TJtPN=200 oC;Te is
variable depending on conditions.second breakdown pulse limits are 'nilid for dLrty cycles to 10% provided T jcp~5200oC,At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.