2N3773 datasheet



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2N3773 data
2N3773 datasheet
COMPLEMENTARY SILICON PO/NER TRANSISTORS
FEATURES:
* High Power Dissipaton
PD = 150 W (Tc = 25oC)
High DC Current Gain and Low Saturation Voltage
hFE=15-60@IC=8A,VCE=4V
VCE($A.r) = 1.4 V (Max.) @ lc = 8 A, lB = 0.8 A
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
* Pulse Test: F:,uise width = 300 us . Duty Cycle = 2.0%
ACTIVE-REGION SAFE OPERATING AREA (SOA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are tvto limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits ofthe transistor that must be observed for reliable operation i.e., the transistor must not besubjectedto
greater dissipation than curves indicate.The data of SOA curve is base on TJtPN=200 oC;Te is
variable depending on conditions.second breakdown pulse limits are 'nilid for dLrty cycles to 10% provided T jcp~5200oC,At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
he 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8 A, 4 V
VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
For Low Distortion Complementary Designs
Pb-Free Packages are Available